july-2012 1 tentativ e < igbt modules > CM900DUC-24S high power switching use insulated type collector current i c .............?.......................? 900 a collector-emitter voltage v ces ......................? 1200 v maximum junction temperature t jmax .............. 175 c flat base type copper base plate (non-plating) rohs directive compliant dual switch (half-bridge) application wind power, photovoltaic (solar) power, ac motor control, motion/servo control, power supply, etc. outline drawing & internal connection dimension in mm internal connection tolerance otherwise specified division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 di2 tr2 c2e1 e2 e2 (es2) c1 tr1 di1 g2 c2 (cs2) e1 (es1) g1 c1 (cs1) the tolerance of size between terminals is assumed to be 0.4.
< igbt modules > CM900DUC-24S high power switching use insulated type july-2012 2 tentativ e absolute maximum ratings (t j =25 c, unless otherwise specified) symbol item conditions rating unit v ces collector-emitter voltage g-e short-circuited 1200 v v ges gate-emitter voltage c-e short-circuited 20 v i c dc, t c =125 c (note2, 4) 900 i crm collector current pulse, repetitive (note3) 1800 a p tot total power dissipation t c =25 c (note2, 4) 6520 w i e (note1) (note2) 900 i erm (note1) emitter current pulse, repetitive (note3) 1800 a v isol isolation voltage terminals to base plate, rms, f=60 hz, ac 1 min 4000 v t jmax maximum junction temperature - 175 c t cmax maximum case temperature (note4) 125 c t jop operating junction temperature - -40 ~ +150 t stg storage temperature - -40 ~ +125 c electrical characteristics (t j =25 c, unless otherwise specified) limits symbol item conditions min. typ. max. unit i ces collector-emitter cut-off current v ce =v ces , g-e short-circuited - - 1.0 ma i ges gate-emitter leakage current v ge =v ges , c-e short-circuited - - 3.0 a v ge(th) gate-emitter threshold voltage i c =90 ma, v ce =10 v 5.4 6.0 6.6 v i c =900 a (note6) , t j =25 c - 1.55 1.90 v ge =15 v, t j =125 c - 1.75 - (terminal) t j =150 c - 1.80 - v v cesat collector-emitter saturation voltage i c =900 a, v ge =15 v, (chip) - 1.55 - v c ies input capacitance - - 90 c oes output capacitance - - 18 c res reverse transfer capacitance v ce =10 v, g-e short-circuited - - 1.5 nf q g gate charge v cc =600 v, i c =900 a, v ge =15 v - 2300 - nc t d(on) turn-on delay time - - 900 t r rise time v cc =600 v, i c =900 a, v ge =15 v, - - 250 t d(off) turn-off delay time - - 950 t f fall time r g =0 ? , inductive load - - 350 ns i e =900 a (note6) , t j =25 c - 1.65 2.10 g-e short-circuited, t j =125 c - 1.65 - (terminal) t j =150 c - 1.65 - v v ec (note1) emitter-collector voltage i e =900 a, g-e short-circuited, (chip) - 1.65 - v t rr (note1) reverse recovery time v cc =600 v, i e =900 a, v ge =15 v, - - 450 ns q rr (note1) reverse recovery charge r g =0 ? , inductive load - 50 - c e on turn-on switching energy per pulse v cc =600 v, i c =i e =900 a, - 65.3 - e off turn-off switching energy per pulse v ge =15 v, r g =0 ? , t j =150 c, - 183 - mj e rr (note1) reverse recovery energy per pulse inductive load - 73.3 - mj main terminals-chip, per switch, r cc'+ee' internal lead resistance t c =25 c (note4) - 0.286 - m ? r g internal gate resistance per switch - 2.2 - ?
< igbt modules > CM900DUC-24S high power switching use insulated type july-2012 3 tentativ e thermal resistance characteristics limits symbol item conditions min. typ. max. unit r th(j-c)q junction to case, per inverter igbt - - 23 r th(j-c)d thermal resistance (note4) junction to case, per inverter fwdi - - 39 k/kw case to heat sink, per 1 module, r th(c-s) contact thermal resistance (note4) thermal grease applied (note7) - 6 - k/kw mechanical characteristics limits symbol item conditions min. typ. max. unit m t main terminals m 6 screw 3.5 4.0 4.5 m s mounting torque mounting to heat sink m 6 screw 3.5 4.0 4.5 nm terminal to terminal 24 - - d s creepage distance terminal to base plate 33 - - mm terminal to terminal 14 - - d a clearance terminal to base plate 33 - - mm m weight - - 1450 - g e c flatness of base plate on the centerline x, y1, y2 (note5) -50 - +100 m note1. represent ratings and characteristics of the anti- parallel, emitter-collector free wheeling diode (fwdi). 2. junction temperature (t j ) should not increase beyond t jmax rating. 3. pulse width and repetition rate should be such that the device junction temperature (t j ) dose not exceed t jmax rating. 4. case temperature (t c ) and heat sink temperature (t s ) are defined on the each surface (mounti ng side) of base plate and heat sink just under the chips. refer to the figure of chip location. 5. pulse width and repetition rate should be such as to cause negligible temperature rise. refer to the figure of test circuit. 6. typical value is measured by us ing thermally conductive grease of =0.9 w/(mk). 7. the base plate (mounting side) flatne ss measurement points (x, y1, y2) are as follows of the following figure. +: convex -: concave +: convex bottom bottom label side bottom y1 x y2 -: concave 36 mm 36 mm 8. the company name and product names herein are the trademar ks and registered trademarks of the respective companies.
< igbt modules > CM900DUC-24S high power switching use insulated type july-2012 4 tentativ e recommended operating conditions limits symbol item conditions min. typ. max. unit v cc (dc) supply voltage applied across p-n terminals - 600 850 v v geon gate (-emitter drive) voltage appli ed across g-es terminals 13.5 15.0 16.5 v r g external gate resistance per switch 0 - 3.6 ? chip location (top view) dimension in mm, tolerance: 1 mm tr1/tr2: igbt, di1/di2: fwdi test circuit v ge =15v i c c1 c2e1 e2 es2 g2 es 1 g1 cs2 cs1 v short- circuited v ge =15v v i c c1 c2e1 e2 es2 g2 es 1 g1 cs2 cs1 shor t - circuited i e c1 c2e1 e2 es2 g2 es 1 g1 cs2 cs1 v short- circuited short- circuited v i e c1 c2e1 e2 es2 g2 es 1 g1 cs2 cs1 short- circuited short- circuited tr1 tr2 di1 di2 v cesat test circuit v ec test circuit
< igbt modules > CM900DUC-24S high power switching use insulated type july-2012 5 tentativ e test circuit and waveforms t t f t r t d(on) i c 10% 90 % 90 % v ge v cc r g -v ge +v ge -v ge load 0 v 0 a + 0 v c e v ge 0 v t d(off) t i e i c c1 e2 c2e1 g1 es1 g2 es2 cs1 cs2 i rr q rr =0.5i rr t rr 0.5i rr t t rr i e 0 a i e switching characteristics test circuit and waveforms t rr , q rr test waveform 0.1i cm i cm v cc v ce i c t 0 t i 0.1v cc 0.1v cc v cc i cm v ce i c t 0 0.02i cm t i i em v ec i e t 0 v t i t v cc 0 a igbt turn-on switching energy igbt turn-off switching energy fwdi reverse recovery energy turn-on / turn-off switching energy and reverse recovery energy test waveforms (integral time instruction drawing)
< igbt modules > CM900DUC-24S high power switching use insulated type july-2012 6 tentativ e performance curves output characteristics (typical) collector-emitter saturation voltage characteristics (typical) t j =25 c v ge =15 v collector current i c (a) 0 200 400 600 800 1000 1200 1400 1600 1800 024681 0 collector-emitter saturation voltage v cesat (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200 1400 1600 1800 collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) free wheeling diode forward characteristics (typical) t j =25 c g-e short-circuited collector-emitter saturation voltage v cesat (v) 0 2 4 6 8 10 6 8 10 12 14 16 18 20 emitter current i e (a) 0 200 400 600 800 1000 1200 1400 1600 1800 0.0 0.5 1.0 1.5 2.0 2.5 3.0 gate-emitter voltage v ge (v) emitter-collector voltage v ec (v) t j =125 c t j =25 c t j =150 c v ge =20 v 12 v 11 v 10 v 9 v 13.5 v 15 v t j =25 c t j =125 c t j =150 c i c =1800 a i c =900 a i c =360 a
< igbt modules > CM900DUC-24S high power switching use insulated type july-2012 7 tentativ e performance curves half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =0 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, i c =900 a, v ge =15 v, inductive load --------------- : t j =150 c, - - - - -: t j =125 c switching time t d(on) , t r (ns) 10 100 1000 100 1000 100 1000 10000 switching time t d(off) , t f (ns) switching time t d(on) , t r (ns) 10 100 1000 0 . 111 0 100 1000 10000 switching time t d(off) , t f (ns) collector current i c (a) external gate resistance r g ( ? ) half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =0 ? , inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, i c /i e =900 a, v ge =15 v, inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c switching energy e on (mj) reverse recovery energy (mj) 10 100 1000 100 1000 1 10 100 switching energy e off (mj) switching energy (mj) reverse recovery energy (mj) 10 100 1000 0.1 1 10 collector current i c (a) emitter current i e (a) external gate resistance r g ( ? ) e on e off e rr t d(on) t d(off) t f t r t d(on) t d(off) t f t r e on e rr e off
< igbt modules > CM900DUC-24S high power switching use insulated type july-2012 8 tentativ e performance curves capacitance characteristics (typical) free wheeling diode reverse recovery characteristics (typical) g-e short-circuited, t j =25 c v cc =600 v, v ge =15 v, r g =0 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c capacitance (nf) 0.1 1 10 100 1000 0.1 1 10 100 t rr (ns), i rr (a) 100 1000 10 100 1000 collector-emitter voltage v ce (v) emitter current i e (a) gate charge characteristics (typical) transient thermal impedance characteristics (maximum) v cc = 600 v, i c = 900 a, t j =25 c single pulse, t c =25c r th(j-c)q =23 k/kw, r th(j-c)d =39 k/kw gate-emitter voltage v ge (v) 0 5 10 15 20 0 500 1000 1500 2000 2500 3000 normalized transient thermal impedance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 gate charge q g (nc) time (s) c ies c oes c res i rr t rr
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